Characterization and Analysis of the Temperature-Dependent on -Resistance in AlGaN/GaN Lateral Field-Effect Rectifiers

Author

Wong, King-Yuen ; Chen, Wanjun ; Chen, Kevin J.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

57

Issue

8

fYear

2010

Firstpage

1924

Lastpage

1929

Abstract

The on-resistance and its temperature dependence of the high electron mobility transistor (HEMT)-compatible lateral field-effect rectifier (L-FER) are investigated. Three types of transfer length method (TLM) patterns are utilized to extract the temperature-dependent electrical parameters of the resistance model. The technique presented in this paper delivers a direct and simple methodology for the investigation of the temperature dependence of the on-resistance in the L-FER. The simulated output characteristics of the L-FER are in good agreement with the experimental results.

Keywords

aluminium compounds; field effect devices; gallium compounds; high electron mobility transistors; rectifiers; AlGaN-GaN; HEMT; high electron mobility transistor; lateral field-effect rectifiers; temperature-dependent ON-resistance; temperature-dependent electrical parameters; transfer length method patterns; Aluminum gallium nitride; Electronics cooling; Gallium nitride; HEMTs; MODFETs; MOSFETs; Power electronics; Rectifiers; Temperature dependence; Thermal resistance; AlGaN/GaN; lateral field-effect rectifier (L-FER); parameter extraction; semiconductor device modeling; thermal resistance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2051245

Filename

5497132