Micromachined probes for characterization of terahertz devices

Author

Weikle, Robert M. ; Barker, N.S. ; Lichtenberger, Arthur W. ; Bauwens, Matthew F. ; Alijabbari, Naser

Author_Institution

Univ. of Virginia, Charlottesville, VA, USA

fYear

2014

fDate

14-19 Sept. 2014

Firstpage

1

Lastpage

3

Abstract

The recent development of micromachined probes for on-wafer characterization of devices and circuits now permit measurements to the WR-1.0 waveguide band (0.75-1.1 THz). This paper presents the probe design concept, describes methods for characterizing the probes, and applies the probes for direct on-wafer characterization of planar Schottky diodes at 1 THz. Measurements show the WR-1.0 probes exhibit an insertion loss of approximately 7 dB and a return loss greater than 15 dB over 750-1100 GHz band. This is the first demonstration of on-wafer probe measurements above 1 THz.

Keywords

Schottky diodes; micromachining; submillimetre wave diodes; terahertz wave devices; waveguides; WR-1.0 waveguide band; direct on-wafer characterization; frequency 0.75 THz to 1.1 THz; insertion loss; micromachined probes; on-wafer probe measurements; planar Schottky diodes; probe design concept; return loss; terahertz device characterization; Coplanar waveguides; Probes; Scattering parameters; Schottky diodes; Silicon; Standards; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on

Conference_Location

Tucson, AZ

Type

conf

DOI

10.1109/IRMMW-THz.2014.6956029

Filename

6956029