DocumentCode :
152641
Title :
Micromachined probes for characterization of terahertz devices
Author :
Weikle, Robert M. ; Barker, N.S. ; Lichtenberger, Arthur W. ; Bauwens, Matthew F. ; Alijabbari, Naser
Author_Institution :
Univ. of Virginia, Charlottesville, VA, USA
fYear :
2014
fDate :
14-19 Sept. 2014
Firstpage :
1
Lastpage :
3
Abstract :
The recent development of micromachined probes for on-wafer characterization of devices and circuits now permit measurements to the WR-1.0 waveguide band (0.75-1.1 THz). This paper presents the probe design concept, describes methods for characterizing the probes, and applies the probes for direct on-wafer characterization of planar Schottky diodes at 1 THz. Measurements show the WR-1.0 probes exhibit an insertion loss of approximately 7 dB and a return loss greater than 15 dB over 750-1100 GHz band. This is the first demonstration of on-wafer probe measurements above 1 THz.
Keywords :
Schottky diodes; micromachining; submillimetre wave diodes; terahertz wave devices; waveguides; WR-1.0 waveguide band; direct on-wafer characterization; frequency 0.75 THz to 1.1 THz; insertion loss; micromachined probes; on-wafer probe measurements; planar Schottky diodes; probe design concept; return loss; terahertz device characterization; Coplanar waveguides; Probes; Scattering parameters; Schottky diodes; Silicon; Standards; Transmission line measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
Type :
conf
DOI :
10.1109/IRMMW-THz.2014.6956029
Filename :
6956029
Link To Document :
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