• DocumentCode
    1526534
  • Title

    Room-temperature pulsed operation of 1.3 μm vertical-cavity lasers including bottom InGaAsP/InP multilayer Bragg mirrors

  • Author

    Salet, P. ; Gaborit, F. ; Pagnod-Rossiaux, Ph ; Plais, A. ; Derouin, E. ; Pasquier, J. ; Jacquet, J.

  • Author_Institution
    Alcatel-Alsthom Recherche, Marcoussis, France
  • Volume
    33
  • Issue
    24
  • fYear
    1997
  • fDate
    11/20/1997 12:00:00 AM
  • Firstpage
    2048
  • Lastpage
    2049
  • Abstract
    The authors have fabricated 1.3 μm vertical-cavity lasers including bottom-epitaxial InGaAsP/InP multilayer Bragg mirrors and top SiO2/Si dielectric mirrors; these components exhibit laser operation at room temperature under pulsed electrical injection
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser mirrors; semiconductor lasers; surface emitting lasers; 1.3 micron; InGaAsP-InP; SiO2-Si; SiO2/Si dielectric mirror; VCSEL; epitaxial InGaAs/InP multilayer Bragg mirror; pulsed electrical injection; room-temperature operation; vertical-cavity laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971408
  • Filename
    648462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1526534