• DocumentCode
    1526612
  • Title

    Low polarisation sensitivity electroabsorption modulators for 160 Gbit/s networks

  • Author

    Moodie, Dave G. ; Cannard, Paul J. ; Ford, C.W. ; Reed, Jeff ; Moore ; Lucek, J.K. ; Ellis, A.D.

  • Author_Institution
    BT Labs., Ipswich
  • Volume
    33
  • Issue
    24
  • fYear
    1997
  • fDate
    11/20/1997 12:00:00 AM
  • Firstpage
    2068
  • Lastpage
    2070
  • Abstract
    Packaged low polarisation sensitivity InGaAs-InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160 Gbit/s OTDM systems is experimentally assessed
  • Keywords
    III-V semiconductors; aluminium compounds; digital communication; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical communication equipment; optical fibre networks; semiconductor quantum wells; time division multiplexing; 160 Gbit/s; InGaAs-InAlAs; InGaAs-InAlAs MQW; OTDM systems; electroabsorption modulators; low polarisation sensitivity; optical TDM networks; packaged devices; ridged deeply etched buried heterostructure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971393
  • Filename
    648481
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1526612