• DocumentCode
    1526642
  • Title

    Current gain in amorphous silicon hot electron devices

  • Author

    Shannon, John M. ; Kovsarian, A. ; Curran, J.E.

  • Author_Institution
    Dept. of Electron. Eng., Surrey Univ., Guildford
  • Volume
    33
  • Issue
    24
  • fYear
    1997
  • fDate
    11/20/1997 12:00:00 AM
  • Firstpage
    2074
  • Lastpage
    2075
  • Abstract
    Useful current gains have been obtained from hydrogenated amorphous silicon structures containing narrow amorphous silicide base regions. The current gains have been determined from amplification of junction leakage and photo-currents with the base open-circuited. The measurements are consistent with efficient transport of hot electrons across an amorphous silicide base a few nanometres thick
  • Keywords
    amorphous semiconductors; Si:H-CrSi2; amorphous Si devices; current gain; hot electron devices; hot electron transistor action; hydrogenated amorphous Si structures; junction leakage; narrow amorphous silicide base regions; photocurrents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971374
  • Filename
    648485
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1526642