• DocumentCode
    1526848
  • Title

    4H-SiC avalanche photodiode with multistep junction extension termination

  • Author

    Yan, F. ; Luo, Y. ; Zhao, J.H. ; Bush, M. ; Olsen, G.H. ; Weiner, M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
  • Volume
    37
  • Issue
    17
  • fYear
    2001
  • fDate
    8/16/2001 12:00:00 AM
  • Firstpage
    1080
  • Lastpage
    1081
  • Abstract
    4H-SiC avalanche photodiodes (APDs) are fabricated with a multistep junction termination extension. The leakage current density has been dramatically reduced to as low as 1 μA/cm2 and photo-responsivity up to 105 A/W has been achieved. The 4H-SiC APDs can run very stably at power densities up to 104 W/cm2
  • Keywords
    avalanche photodiodes; current density; optical fabrication; p-n junctions; photodetectors; semiconductor device reliability; semiconductor epitaxial layers; semiconductor materials; silicon compounds; ultraviolet detectors; 4H-SiC avalanche photodiode; SiC; fabrication; leakage current density; multistep junction extension termination; multistep junction termination extension; photo-responsivity; power densities;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010720
  • Filename
    948337
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1526848