Title :
4H-SiC avalanche photodiode with multistep junction extension termination
Author :
Yan, F. ; Luo, Y. ; Zhao, J.H. ; Bush, M. ; Olsen, G.H. ; Weiner, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
8/16/2001 12:00:00 AM
Abstract :
4H-SiC avalanche photodiodes (APDs) are fabricated with a multistep junction termination extension. The leakage current density has been dramatically reduced to as low as 1 μA/cm2 and photo-responsivity up to 105 A/W has been achieved. The 4H-SiC APDs can run very stably at power densities up to 104 W/cm2
Keywords :
avalanche photodiodes; current density; optical fabrication; p-n junctions; photodetectors; semiconductor device reliability; semiconductor epitaxial layers; semiconductor materials; silicon compounds; ultraviolet detectors; 4H-SiC avalanche photodiode; SiC; fabrication; leakage current density; multistep junction extension termination; multistep junction termination extension; photo-responsivity; power densities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010720
