Title :
Nickel ohmic contacts to p and n-type 4H-SiC
Author :
Fursin, L.G. ; Zhao, Jun Hua ; Weiner, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
8/16/2001 12:00:00 AM
Abstract :
The first demonstration of Ni ohmic contacts to both p+ and n+ 4H-SiC formed by ion implantation is reported. Sample preparation conditions are described and experimental results presented. Specific contact resistances in the range of 10-4 Ω cm 2 and 10-6 Ω cm2 for p+ and n+ 4H-SiC, respectively, have been determined by the transfer length method
Keywords :
contact resistance; ion implantation; nickel; ohmic contacts; semiconductor-metal boundaries; silicon compounds; wide band gap semiconductors; Ni ohmic contacts; Ni-SiC; SiC epilayers; ion implantation; n+ 4H-SiC; p+ 4H-SiC; sample preparation conditions; specific contact resistances; transfer length method;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010738
