Modeling the [dV/dt] of the IGBT during inductive turn off

Insulated gate bipolar transistor (IGBT)-based pulsewidth modulation (PWM) inverters are commonly used in inductive load circuits such as motor control. During clamped inductive load turn off of the IGBT, high-power losses occur during two phases. Due to the large inductive motor load, the voltage across the IGBT rises to the bus voltage while carrying the full-rated current. In the second phase, the current decreases as the IGBT goes into its forward blocking mode. In this paper, the turn-off process during the first phase is analyzed in detail for the first time. A simple analytical model has been derived, based upon the initial steady-state minority carrier distribution, which allows predicting the rate of rise of the voltage during this time period where the collector current remains constant. The predictions of the analytical model are in excellent agreement with results obtained from two-dimensional (2-D) numerical simulations over a broad range of minority carrier lifetime values. This analytical model provides a good estimate (within 10%) of the power losses incurred during the first phase of turn off