• DocumentCode
    1526925
  • Title

    Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax=425 GHz

  • Author

    Lee, S. ; Kim, H.J. ; Urteaga, M. ; Krishnan, S. ; Wei, Y. ; Dahlstrom, M. ; Rodwell, M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    37
  • Issue
    17
  • fYear
    2001
  • fDate
    8/16/2001 12:00:00 AM
  • Firstpage
    1096
  • Lastpage
    1098
  • Abstract
    InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) with fmax=425 GHz and fτ=141 GHz using transferred-substrate technology are reported. This is the highest reported fmax for a DHBT. The breakdown voltage BVCEO is 8 V at JC=5×104 A/cm2 and the DC current gain β is 43
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; millimetre wave bipolar transistors; millimetre wave power transistors; power bipolar transistors; semiconductor device breakdown; semiconductor device measurement; 141 GHz; 425 GHz; 8 V; DC current gain; InP-InGaAs-InP; InP/InGaAs/InP DHBTs; breakdown voltage; high speed high power applications; maximum frequency of oscillation; transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors; transferred-substrate technology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010728
  • Filename
    948348
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1526925