Title :
Characterization of power electronics system interconnect parasitics using time domain reflectometry
Author :
Zhu, Huibin ; Hefner, Allen R., Jr. ; Lai, Jih-Sheng
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fDate :
7/1/1999 12:00:00 AM
Abstract :
The significance of interconnect parasitics of power electronics systems is their effects on power converters´ electromagnetic interference (EMI)-related performances, such as voltage/current spikes, dv/dt, di/dt, conducted/radiated EMI noise, etc. In this paper, a time domain reflectometry (TDR) measurement-based modeling technique is described for characterizing interconnect parasitics in switching power converters. Experiments are conducted on power components of a prototype high-power inverter, including insulated gate bipolar transistor (IGBT) modules, busbar and bulk capacitors. It is shown that the interconnect inductance of the IGBT module can be extracted completely using TDR. It is also shown that the busbar equivalent circuit can be modeled as transmission line segments or L-C filter sections, and the bulk capacitor contains a significant equivalent series interconnect inductance
Keywords :
electromagnetic interference; equivalent circuits; inductance; insulated gate bipolar transistors; power bipolar transistors; power capacitors; power convertors; switching circuits; time-domain reflectometry; EMI performance; IGBT modules; L-C filter sections; bulk capacitors; busbar; busbar equivalent circuit; di/dt; dv/dt; electromagnetic interference; interconnect inductance; interconnect parasitics characterisation; modelling technique; power electronics systems; switching power converters; time domain reflectometry measurements; transmission line segments; voltage/current spikes; Capacitors; Electromagnetic interference; Inductance; Insulated gate bipolar transistors; Integrated circuit interconnections; Power electronics; Power measurement; Power system interconnection; Reflectometry; Voltage;
Journal_Title :
Power Electronics, IEEE Transactions on