DocumentCode
1527018
Title
Biristor—Bistable Resistor Based on a Silicon Nanowire
Author
Han, Jin-Woo ; Choi, Yang-Kyu
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Volume
31
Issue
8
fYear
2010
Firstpage
797
Lastpage
799
Abstract
A circuit element, named bistable resistor (or biristor), is proposed. The biristor has two stable resistance states. A high resistance state and low leakage current are maintained until an applied voltage reaches a latch-up voltage to trigger an avalanche effect. A low resistance state and high current are attained at voltage above the latch up. The low resistance state is latched until the applied voltage decreases down to the latch-down voltage. Bistable resistance states are achieved between the latch-down and the latch-up voltage. In addition, an optical stimulus appears to reduce the latch voltages.
Keywords
nanowires; resistors; silicon; Si; biristor; bistable resistance states; bistable resistor; high-resistance state; latch-down voltage; latch-up voltage; low-leakage current; silicon nanowire; Bistable resistor (biristor); n-p-n; p-n-p; silicon nanowire; two terminals;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2051405
Filename
5498860
Link To Document