• DocumentCode
    1527018
  • Title

    Biristor—Bistable Resistor Based on a Silicon Nanowire

  • Author

    Han, Jin-Woo ; Choi, Yang-Kyu

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
  • Volume
    31
  • Issue
    8
  • fYear
    2010
  • Firstpage
    797
  • Lastpage
    799
  • Abstract
    A circuit element, named bistable resistor (or biristor), is proposed. The biristor has two stable resistance states. A high resistance state and low leakage current are maintained until an applied voltage reaches a latch-up voltage to trigger an avalanche effect. A low resistance state and high current are attained at voltage above the latch up. The low resistance state is latched until the applied voltage decreases down to the latch-down voltage. Bistable resistance states are achieved between the latch-down and the latch-up voltage. In addition, an optical stimulus appears to reduce the latch voltages.
  • Keywords
    nanowires; resistors; silicon; Si; biristor; bistable resistance states; bistable resistor; high-resistance state; latch-down voltage; latch-up voltage; low-leakage current; silicon nanowire; Bistable resistor (biristor); n-p-n; p-n-p; silicon nanowire; two terminals;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2051405
  • Filename
    5498860