Title :
Progress on Mn-Co-Ni-O infrared thin films and detectors
Author :
Zhiming Huang ; Cheng OuYang ; Wei Zhou ; Jingchao Tong ; Jingguo Huang ; Jing Wu ; Yanqing Gao ; Junhao Chu
Author_Institution :
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
Abstract :
High quality Mn-Co-Ni-O (MCN) spinel films are prepared on Al2O3 substrate by RF magnetron sputtering (RF) and chemical solution deposition (CSD). The microstructural characterizations reveal the films present excellent crystallization and compact surface. The variable temperature electrical results show the films have temperature coefficient of resistance (TCR) of -3.8 %/K at 295 K. Based on the electrical results of CSD-MCN films in 130~304 K, we find that the hopping exponent p of small polaron hopping conduction shows a clear variation from a value of 0.46 in the paramagnetic to 0.91 in the ferromagnetic phase at around 200 K. The mid-infrared optical properties of the films are obtained by fitting the measured ellipsometric parameter data using the classical infrared model. MCN film detectors are fabricated by photolithography follow by wet etching process to evaluate the applications for infrared detection. It exhibits a noise equivalent temperature difference as low as 2.1×10-7 K/Hz1/2, responsivity of 330 V/W, and detectivity of 0.6×108 cmHz1/2/W at 30 Hz. The 8×1 element MCN detector array is also successfully fabricated, and the response uniformity is about 5.9 %.
Keywords :
cobalt compounds; crystallisation; electric resistance; ellipsometry; etching; ferromagnetic materials; hopping conduction; infrared detectors; liquid phase deposition; magnetic thin films; manganese compounds; nickel compounds; paramagnetic materials; photolithography; small polaron conduction; sputter deposition; Al2O3; Al2O3 substrate; Mn-Co-Ni-O; RF magnetron sputtering; chemical solution deposition; compact surface; crystallization; detectivity; ellipsometric parameter data; ferromagnetic phase; frequency 30 Hz; high quality Mn-Co-Ni-O spinel films; hopping exponent; infrared detectors; infrared thin films; microstructural characterizations; mid-infrared optical properties; noise equivalent temperature difference; paramagnetic phase; photolithography; responsivity; small polaron hopping conduction; temperature 130 K to 304 K; temperature coefficient of resistance; variable temperature electrical results; wet etching; Detectors; Optical device fabrication; Optical films; Optical sensors; Physics; Temperature measurement;
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
DOI :
10.1109/IRMMW-THz.2014.6956061