Analysis of Self-Heating-Related Instability in Self-Aligned p-Channel Polycrystalline-Silicon Thin-Film Transistors

Author

Gaucci, P. ; Valletta, A. ; Mariucci, L. ; Pecora, A. ; Maiolo, L. ; Fortunato, G.

Author_Institution

LTstituto per la Microelettronica e Microsistemi, Consiglio Naz. delle Ric. (IMM-CNR), Rome, Italy

Volume

31

Issue

8

fYear

2010

Firstpage

830

Lastpage

832

Abstract

Self-heating-related instabilities have been studied in p-channel polycrystalline-silicon thin-film transistors. The spatial distribution of the interface-state and fixed-oxide-charge densities generated during self-heating experiments has been analyzed and quantitatively determined by using negative-bias temperature stress experiments and 2-D numerical simulations. In addition, the observed asymmetry in the output characteristics with respect to source/drain contact reversal is also perfectly reproduced, confirming the validity of the proposed model.

Keywords

elemental semiconductors; numerical analysis; silicon; thin film transistors; 2D numerical simulations; Si; interface-state-fixed-oxide-charge densities; p-channel polycrystalline-silicon thin-film transistors; self-heating-related instability; source-drain contact reversal; spatial distribution; Numerical simulations; polycrystalline silicon; self-heating effects; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2051137

Filename

5498870