DocumentCode :
152707
Title :
Carrier multiplication in bulk silicon investigated by terahertz spectroscopy
Author :
Yamashita, G. ; Matsubara, Eiichi ; Nagai, Masaharu ; Kanemitsu, Yoshihiko ; Ashida, M.
Author_Institution :
Grad. Sch. of Eng. Sci., Osaka Univ., Toyonaka, Japan
fYear :
2014
fDate :
14-19 Sept. 2014
Firstpage :
1
Lastpage :
2
Abstract :
We studied the carrier multiplication efficiency in bulk silicon using optical-pump/THz-probe spectroscopy. By the close analysis of the time resolved data, we observed the enhancement of the quantum efficiency due to carrier multiplication for incident photon energy above 4.1 eV. It agrees well with the results of photo current measurements. We believe that the present results enable us to correlate the results of quantum efficiency measurements of nano-structured materials and bulks.
Keywords :
elemental semiconductors; silicon; terahertz wave spectra; time resolved spectra; Si; bulk silicon; carrier multiplication efficiency; incident photon energy; nanostructured materials; optical-pump/terahertz-probe spectroscopy; photocurrent measurements; quantum efficiency enhancement; time resolved data; Conductivity; Optical pumping; Photonics; Physics; Semiconductor device measurement; Silicon; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
Type :
conf
DOI :
10.1109/IRMMW-THz.2014.6956062
Filename :
6956062
Link To Document :
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