A realization of low-distortion CMOS transconductance amplifier

Author

Morozov, D.V. ; Korotkov, A.S.

Author_Institution

Dept. of Electr. Eng. & Telecommun., St. Petersburg State Tech. Univ., Russia

Volume

48

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

1138

Lastpage

1141

Abstract

A new CMOS transconductance amplifier with low-harmonic distortion is proposed. The used technique is based on the parallel connection of two amplifiers. The first transconductor is working in the triode region, the other one is in the saturation. Compared to the known method, the realization of the discussed circuit provides a good value of G_m/I parameter and lower power consumption. An estimation indicates that 15% power saving can be achieved. A special current-biasing block and large size MOS transistors will not be required. The results of the theoretical analysis as well as the results of the computer simulations are presented

Keywords

CMOS analogue integrated circuits; amplifiers; harmonic distortion; low-power electronics; CMOS transconductance amplifier; MOS transistor; compensation technique; computer simulation; harmonic distortion; linearity; parallel connection; power consumption; saturation region; triode region; Automatic control; Circuits; Control systems; Filtering; Filters; Lyapunov method; Time varying systems; Transconductance; Transconductors; Uncertain systems;

fLanguage

English

Journal_Title

Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on

Publisher

ieee

ISSN

1057-7122

Type

jour

DOI

10.1109/81.948443

Filename

948443