DocumentCode :
1527289
Title :
A realization of low-distortion CMOS transconductance amplifier
Author :
Morozov, D.V. ; Korotkov, A.S.
Author_Institution :
Dept. of Electr. Eng. & Telecommun., St. Petersburg State Tech. Univ., Russia
Volume :
48
Issue :
9
fYear :
2001
fDate :
9/1/2001 12:00:00 AM
Firstpage :
1138
Lastpage :
1141
Abstract :
A new CMOS transconductance amplifier with low-harmonic distortion is proposed. The used technique is based on the parallel connection of two amplifiers. The first transconductor is working in the triode region, the other one is in the saturation. Compared to the known method, the realization of the discussed circuit provides a good value of Gm/I parameter and lower power consumption. An estimation indicates that 15% power saving can be achieved. A special current-biasing block and large size MOS transistors will not be required. The results of the theoretical analysis as well as the results of the computer simulations are presented
Keywords :
CMOS analogue integrated circuits; amplifiers; harmonic distortion; low-power electronics; CMOS transconductance amplifier; MOS transistor; compensation technique; computer simulation; harmonic distortion; linearity; parallel connection; power consumption; saturation region; triode region; Automatic control; Circuits; Control systems; Filtering; Filters; Lyapunov method; Time varying systems; Transconductance; Transconductors; Uncertain systems;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
1057-7122
Type :
jour
DOI :
10.1109/81.948443
Filename :
948443
Link To Document :
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