Fifth-order state-space modeling of class E amplifiers with finite-series inductance and an anti-parallel diode at the switch

Author

Tan, Lien Seng ; Tan, David G H ; McMahon, Richard A. ; Carter, Douglas R H

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

48

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

1141

Lastpage

1146

Abstract

A state-space model is developed to enable a general analysis of the class E amplifier with a power-MOSFET switch under nonoptimal and optimal conditions. That is, it permits analysis of nonzero voltage switching and nonzero current switching operation, as well as the optimal zero voltage switching (ZVS) and zero current switching (ZCS) condition. This is achieved by improving the representation of the power MOSFET switch by the inclusion of a series inductance, a model for the on-state resistance and switching time, and a model for the anti-parallel body diode. An optimal 100-kHz class E amplifier was designed and constructed, using the model to choose component values. Experimental results show good agreement with the predictions of the state-space model for both optimal and nonoptimal operating conditions

Keywords

field effect transistor switches; power MOSFET; power amplifiers; state-space methods; 100 kHz; anti-parallel diode; class-E amplifier; fifth-order state-space model; high-frequency circuit; nonzero current switching; nonzero voltage switching; on-state resistance; power MOSFET switch; series inductance; zero current switching; zero voltage switching; Diodes; Immune system; Inductance; MOSFET circuits; Power MOSFET; Power amplifiers; Predictive models; Switches; Zero current switching; Zero voltage switching;

fLanguage

English

Journal_Title

Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on

Publisher

ieee

ISSN

1057-7122

Type

jour

DOI

10.1109/81.948444

Filename

948444