• DocumentCode
    1527318
  • Title

    All-optical waveguide-type gain switch utilizing intersubband transition

  • Author

    Hirono, T. ; Kobayashi, H. ; Asai, H. ; Yokoyama, K.

  • Author_Institution
    NTT Opto-Electron. Labs., Kanagawa, Japan
  • Volume
    2
  • Issue
    2
  • fYear
    1996
  • fDate
    6/1/1996 12:00:00 AM
  • Firstpage
    410
  • Lastpage
    417
  • Abstract
    All-optical switching performance of waveguide-type device utilizing intersubband transition is investigated by analyzing the position-dependent change of optical power densities and carrier densities in the waveguide. In the device, the three lowest energy-level subbands in the conduction band structure of asymmetric coupled quantum wells are used. The optical excitation pulse excites the electrons in the first subband to the third subband and the stimulated emission between the third subband and second subband amplifies the optical signal pulse. We find that the signal pulse is notably amplified when the excitation pulsewidth is less than the relaxation time of the third subband. The calculated results show that wavelength conversion from 1.35 to 1.6 μm with a gain of more than 10 dB is achieved by the excitation using an optical pulse with 1.5-ps width. This demonstrates the effectiveness of using a waveguide-type device structure with pulsed operation to make devices with a high-optical gain. We also derive a simple approximation for the optical gain. We show that the approximation gives results in good agreement with the results of the rigorous simulation using a finite difference method and the approximation is useful for designing devices
  • Keywords
    band structure; carrier density; finite difference methods; optical frequency conversion; optical switches; optical waveguide theory; optical waveguides; population inversion; semiconductor quantum wells; semiconductor switches; stimulated emission; 1.35 to 1.6 mum; 1.5 ps; all-optical waveguide-type gain switch; asymmetric coupled quantum wells; carrier densities; conduction band structure; excitation pulsewidth; finite difference method; first subband; high-optical gain; intersubband transition; lowest energy-level subbands; optical excitation pulse; optical power densities; optical signal pulse; position-dependent change; ps width; relaxation time; signal pulse; stimulated emission; subband amplifies; waveguide-type device; waveguide-type device structure; wavelength conversion; Electron optics; Optical devices; Optical pulses; Optical switches; Optical waveguides; Optical wavelength conversion; Performance analysis; Pulse amplifiers; Stimulated emission; Waveguide transitions;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/2944.577403
  • Filename
    577403