DocumentCode
1527471
Title
Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline- 
-Based Resistive-Switching Memory Devices
Author
Lee, Jung-Kyu ; Cho, In-Tak ; Kwon, Hyuck-In ; Hwang, Cheol Seong ; Park, Chan Hyeong ; Lee, Jong-Ho
Author_Institution
Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea
Volume
33
Issue
7
fYear
2012
fDate
7/1/2012 12:00:00 AM
Firstpage
1063
Lastpage
1065
Abstract
Low-frequency noise (LFN) characteristics have been studied in polycrystalline- TiOx-based resistive random access memories (RRAMs). LFNs are proportional to 1/f in high-resistance state (HRS), but those in low-resistance state (LRS) are proportional to 1/f only in less than ~100 Hz. The normalized noise power in HRS is around three orders of magnitude higher than that in LRS. Bias dependence of 1/f noise shows that the current conduction mechanisms from noise measurements are consistent with those from the current-voltage relationships in TiOx-based unipolar RRAM devices.
Keywords
1/f noise; noise measurement; random-access storage; titanium compounds; 1/f noise; HRS; LFN; LRS; TiOx; bias dependence; conduction mechanism; current-voltage relationships; high-resistance state; low-frequency noise characteristics; low-resistance state; noise measurements; normalized noise power; polycrystalline-based resistive-switching memory devices; resistive random access memories; unipolar RRAM devices; Current measurement; Noise; Noise measurement; Random access memory; Silicon; Switches; Temperature measurement; Conduction mechanism; low-frequency noise (LFN); resistive random access memory (RRAM); resistive switching;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2012.2196670
Filename
6208813
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