Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings

Author

Lin, Wei-Hsun ; Lin, Meng-Yu ; Wu, Shung-Yi ; Lin, Shih-Yen

Author_Institution

Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

24

Issue

14

fYear

2012

fDate

7/15/2012 12:00:00 AM

Firstpage

1203

Lastpage

1205

Abstract

The influence of Sb/background As flux ratios on GaSb nano-structures is investigated in this letter. With decreasing Sb/background As flux ratios under high Sb irradiation during the post soaking procedure, ring formation, photoluminescence (PL) intensity enhancement, and PL peak red shift are observed. With further reduced Sb flux and Sb/background As ratios, the observed more intense PL intensities of the quantum-ring (QR) samples compared with quantum dots suggest that more electron-hole wave function overlapping is obtained. The observation of room-temperature electro-luminescence of a QR PIN diode has revealed the potential of the nano-structure in light-emitting device application.

Keywords

III-V semiconductors; electroluminescence; gallium arsenide; gallium compounds; nanostructured materials; p-i-n diodes; photoluminescence; red shift; wave functions; GaSb-GaAs; electron-hole wave function; light-emitting device application; nanostructures; photoluminescence intensity enhancement; post soaking procedure; quantum ring PIN diode; red shift; ring formation; room-temperature electroluminescence; temperature 293 K to 298 K; type-II quantum rings; Gallium arsenide; Light emitting diodes; Luminescence; PIN photodiodes; Periodic structures; Quantum dots; Wave functions; GaSb quantum rings (QR); light-emitting diodes (LEDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2200247

Filename

6208820