Title :
Ultrathin Silicon Chips of Arbitrary Shape by Etching Before Grinding
Author :
Herwik, S. ; Paul, O. ; Ruther, P.
Author_Institution :
Dept. of Microsyst. Eng., Univ. of Freiburg, Freiburg, Germany
Abstract :
A complementary-metal-oxide-semiconductor-compatible fabrication technique for ultrathin silicon chips of arbitrary shape is reported. It combines deep reactive ion etching and wafer grinding to define the in-plane geometry and thickness of the chips, respectively. Neural probes with shaft lengths up to 12 mm and thicknesses down to 25 μm were fabricated.
Keywords :
CMOS integrated circuits; elemental semiconductors; grinding; silicon; sputter etching; complementary-metal-oxide-semiconductor-compatible fabrication technique; deep reactive ion etching; neural probes; ultrathin silicon chips; wafer grinding; Fabrication; Metamaterials; Micromechanical devices; Periodic structures; Probes; Silicon; Substrates; Grinding; separation technique; ultrathin microelectromechanical systems (MEMS);
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2011.2148159
