DocumentCode
1527914
Title
Electrically pumped lasing from CdSe quantum dots
Author
Klude, M. ; Passow, T. ; Kröger, R. ; Hommel, D.
Author_Institution
Inst. fur Festkorperphysik, Bremen Univ., Germany
Volume
37
Issue
18
fYear
2001
fDate
8/30/2001 12:00:00 AM
Firstpage
1119
Lastpage
1120
Abstract
Fabrication of a ZnSe-based laser diode which employs a fivefold CdSe quantum dot stack separated by ZnSSe spacer layers of high S content is reported. For the first time, electrically pumped room-temperature lasing from such quantum dots was obtained at a wavelength around 560.5 nm. The threshold current density is 7.5 kA/cm 2
Keywords
II-VI semiconductors; cadmium compounds; current density; electroluminescence; quantum well lasers; semiconductor quantum dots; 560.5 nm; CdSe quantum dots; CdSe-ZnSSe; ZnSSe spacer layers; ZnSe; ZnSe-based laser diode; electrically pumped lasing; electrically pumped room-temperature lasing; fivefold CdSe quantum dot stack; threshold current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010764
Filename
948941
Link To Document