• DocumentCode
    1527963
  • Title

    Supply-Voltage Scaling Close to the Fundamental Limit Under Process Variations in Nanometer Technologies

  • Author

    Hwang, Myeong-Eun

  • Author_Institution
    Samsung Electron. Co., Ltd., Seoul, South Korea
  • Volume
    58
  • Issue
    8
  • fYear
    2011
  • Firstpage
    2808
  • Lastpage
    2813
  • Abstract
    The fundamental limit on the minimum allowable supply voltage of a complementary metal-oxide-semiconductor (CMOS) logic gate for binary signal discrimination is Vdd, min ≅ 2(ln2)kT/q. With the theoretical analysis of our proposed circuit technique, we demonstrate an ultralow-voltage operation with two 1000-stage inverter chains fabricated in 130- and 65-nm technologies, which can work all the way down to a supply voltage of 50 and 60 mV (with output swings of 42 and 43 mV), respectively, and are close to the fundamental limit of logic operation. For the first time, we present a measured minimum dynamic-switching energy of 21.3 aJ/cycle. This is accomplished by modulating the effective β-ratio to balance the p-channel and n-channel MOS transistors in strength, enabling the operation of standard CMOS logic at ultralow voltages. We also discuss 41-stage ring oscillators, which clearly show the existence of different optimal β-ratios in different regions of operation in terms of performance and robustness under process variations.
  • Keywords
    CMOS logic circuits; low-power electronics; power electronics; CMOS logic gate; binary signal discrimination; complementary metal-oxide-semiconductor; inverter chains; minimum dynamic-switching energy; n-channel MOS transistors; nanometer technologies; p-channel MOS transistors; process variations; supply-voltage; ultralow-voltage operation; Inverters; MOSFETs; Noise; Robustness; Threshold voltage; Voltage control; $beta$-ratio; Dynamic voltage scaling (DVS); fundamental limit; minimum supply voltage; noise margin; subthreshold logic;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2151257
  • Filename
    5776670