Title :
Development of thick orientation patterned GaP for frequency conversion in the Mid IR and THz region
Author :
Vangala, Shivashankar ; Tassev, Vladimir ; Kimani, M. ; Snure, Michael ; Mann, M. ; Peterson, Ronald
Author_Institution :
Sensors Directorate, Air Force Res. Lab., Wright-Patterson AFB, OH, USA
Abstract :
Hydride vapor phase epitaxial growth of thick GaP was performed on plain substrates and on half-patterned templates in order to determine the favorable pattern orientations and the optimal growth conditions for thick device quality orientation patterned GaP. Initial optical characterization and testing of frequency conversion in the grown OPGaP are in progress.
Keywords :
III-V semiconductors; gallium compounds; optical frequency conversion; optical testing; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; GaP; THz region; frequency conversion; half-patterned templates; hydride vapor phase epitaxial growth; mid IR region; optical characterization; optical testing; plain substrates; thick orientation patterned gallium phosphide; Epitaxial growth; Frequency conversion; Gallium arsenide; Inductors; Morphology; Surface morphology;
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
DOI :
10.1109/IRMMW-THz.2014.6956104
