DocumentCode
1528009
Title
Demonstration of 140 A, 800 V 4H-SiC pin/Schottky barrier diodes with multi-step junction termination extension structures
Author
Alexandrov, P. ; Zhao, J.H. ; Wright, W. ; Pan, M. ; Weiner, M.
Author_Institution
United Silicon Carbide Inc., New Brunswick, NJ, USA
Volume
37
Issue
18
fYear
2001
fDate
8/30/2001 12:00:00 AM
Firstpage
1139
Lastpage
1140
Abstract
DC test results of MPS diodes using multi-step junction termination extension (MJTE) designs are presented. The measurements include reverse leakage current, breakdown, and forward voltage drop. The MJTE design allows full utilisation of the large breakdown properties of SiC. Packaged diodes, containing multiple MPS cells with MJTE designs, are also described
Keywords
Schottky diodes; leakage currents; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; semiconductor device packaging; semiconductor device testing; silicon compounds; wide band gap semiconductors; 140 A; 4H-SiC pin/Schottky barrier diodes; 800 V; DC test results; MPS diodes; SiC; breakdown; forward voltage drop; multi-step junction termination extension structures; multiple MPS cells; packaged diodes; reverse leakage current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010777
Filename
948957
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