Title :
Research on a Highly Sensitive Magnetic-Catalytic CMOS-MEMS Compatible Gas Sensor
Author :
Chih-Hsiung Shen ; Shi-Ching Ke
Author_Institution :
Dept. of Mechatron. Eng., Nat. Changhua Univ. of Educ., Changhua, Taiwan
Abstract :
This letter proposes a new magnetic-catalytic sensing mechanism designed to increase the sensitivity of a gas sensor with mesh-stacked sensing electrodes. Beyond the conventional power dissipation of heating to maintain a certain working temperature, the novel gas sensor with a magnetic-catalytic mechanism operates at an ambient temperature, and heating power does not need to be considered. The standard 0.35 μm CMOS process was used to fabricate a gas sensor with mesh-stacked electrodes. To prepare the magnetic sensing material, a SnO2 solution, prepared using the sol-gel method, was mixed with Fe3O4 at a ratio of SnO2:Fe3O4=3:1 and was deposited onto mesh-stacked electrodes. When the CO gas sensor was introduced, the sample was tested and verified inside a CO gas chamber using a magnetic field generator composed of solenoidal coils. According to a careful investigation of the measurement results, the highest sensitivity, 1.73%/ppm, was obtained under 12 G in a horizontal magnetic field, indicating that the mechanism is applicable for use in an ultralow power chemical microsensor with high sensitivity.
Keywords :
CMOS integrated circuits; carbon compounds; catalysis; catalysts; gas sensors; iron compounds; magnetic field measurement; magnetic materials; magnetic sensors; microelectrodes; microfabrication; microsensors; sol-gel processing; solenoids; tin compounds; CO; SnO2-Fe3O4; gas chamber; heating power; highly sensitive magnetic-catalytic CMOS-MEMS compatible gas sensor; magnetic field generator; magnetic flux density 12 G; magnetic sensing material; mesh-stacked sensing electrode; power dissipation; size 0.35 mum; sol-gel method; solenoidal coil; standard CMOS process; ultralow power chemical microsensor; working temperature; Chemicals; Electrodes; Gas detectors; Materials; Metals; Sensitivity; ${rm Fe}_{3}{rm O}_{4}$; ${rm SnO}_{2}$; Complementary metal oxide semiconductor-micro-electromechanical system (CMOS-MEMS); gas sensor; magnetic catalyst; reactive ion etching (RIE);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2291771