Separation by plasma implantation of oxygen (SPIMOX) operational phase space

Author

Iyer, S. Sundar Kumar ; Lu, Xiang ; Liu, Jingbao ; Min, Jing ; Fan, Zhineng ; Chu, Paul K. ; Hu, Chenming ; Cheung, Nathan W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

25

Issue

5

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

1128

Lastpage

1135

Abstract

Separation by plasma implantation of oxygen (SPIMOX) has been suggested as an economic alternative for separation by implantation of oxygen (SIMOX) to form the silicon-on-insulator (SOI) structure. The chief advantage of SPIMOX is the high throughput and low-cost implanter. The operation regime of implantation for SPIMOX, which uses dc plasma immersion ion implantation (PIII) for the oxygen implantation, has been studied in the phase space of implantation time and chamber pressure during implantation. The phase space is developed for a definite implantation voltage and dose which are dependent on the dimensions of the SOI structure to be fabricated. The effects of dose, implantation voltage, and fractional ionization on the phase space have been discussed. SPIMOX can achieve high throughputs for thin-SOI structure fabrications using high fractional ionization plasmas. The phase space developed for SPIMOX implantation ran also be used for other high-dose dc implantations with PIII which require a peaked implant profile below the surface

Keywords

SIMOX; ion implantation; plasma applications; DC plasma immersion ion implantation; SOI structure; SPIMOX; high fractional ionization plasmas; low-cost implanter; operation regime; oxygen implantation; plasma implantation; separation by plasma implantation of oxygen; silicon-on-insulator structure; thin-SOI structure fabrications; Costs; Fabrication; Implants; Ionization; Oxygen; Plasma immersion ion implantation; Plasma materials processing; Silicon on insulator technology; Throughput; Voltage;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/27.649635

Filename

649635