Title :
Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
11/1/1997 12:00:00 AM
Abstract :
Molecular beam epitaxy (MBE) is a highly precise and versatile crystal growth technique. Since the first demonstration of quantum-well and superlattice structures in the early 1970´s, MBE has continuously played a pivotal role in the development of innovative key optoelectronic devices. The advances in real-time feedback growth control make the MBE technique suitable for the demanding manufacturing environment. This paper reviews the principle and status of MBE technology with emphasis on III-V compound semiconductors for optoelectronic applications
Keywords :
III-V semiconductors; molecular beam epitaxial growth; optoelectronic devices; quantum well lasers; reviews; semiconductor quantum wells; semiconductor superlattices; III-V compound semiconductors; MBE; highly precise; innovative key optoelectronic devices; manufacturing environment; molecular beam epitaxy technology; optoelectronic applications; quantum-well structures; real-time feedback growth control; reviews; superlattice structures; versatile crystal growth; Gallium arsenide; III-V semiconductor materials; Laser feedback; Laser theory; Molecular beam epitaxial growth; Optical devices; Quantum cascade lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Proceedings of the IEEE
