DocumentCode
1528879
Title
Future challenges and directions for nitride materials and light emitters
Author
Akasaki, Isamu ; Wetzel, Christian
Author_Institution
High-Tech. Res. Center, Meijo Univ., Nagoya, Japan
Volume
85
Issue
11
fYear
1997
fDate
11/1/1997 12:00:00 AM
Firstpage
1750
Lastpage
1751
Abstract
A review is presented of future issues on wide-bandgap group-III nitride materials and device technology for optoelectronic and high-temperature devices such as LEDs
Keywords
III-V semiconductors; energy gap; high-temperature techniques; light emitting diodes; optical materials; optoelectronic devices; reviews; semiconductor lasers; LEDs; device technology; high-temperature devices; light emitters; nitride materials; optoelectronic devices; review; wide-bandgap group-III nitride materials; Circuits; Dielectric materials; Light emitting diodes; Optical devices; Optical feedback; Optical films; Optical materials; Optical superlattices; Semiconductor materials; Temperature;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/5.649652
Filename
649652
Link To Document