Light-Extraction Enhancement of Large-Area GaN-Based LEDs With Electrochemically Grown ZnO Nanorod Arrays

Author

Lee, Hee Kwan ; Kim, Myung Sub ; Yu, Jae Su

Author_Institution

Dept. of Electron. & Radio Eng., Kyung Hee Univ., Yongin, South Korea

Volume

23

Issue

17

fYear

2011

Firstpage

1204

Lastpage

1206

Abstract

We reported the improvement in light-extraction efficiency of large-area InGaN/GaN blue light-emitting diodes (LEDs) with zinc oxide (ZnO) nanorod arrays (NRAs), together with theoretical analysis. The ZnO NRAs with high transmittance were grown on the indium-tin-oxide surface with a thin Al-doped ZnO seed layer by electrochemical deposition. The vertically well-aligned ZnO NRAs exhibited an excellent suppression of internal reflections as well as a good transmittance. For LEDs with optimized ZnO NRAs, the light output power was improved by ~20% at 350 mA compared to that of the conventional LED.

Keywords

II-VI semiconductors; III-V semiconductors; aluminium; electrodeposition; gallium compounds; indium compounds; integrated optics; light emitting diodes; nanophotonics; nanorods; reflectivity; wide band gap semiconductors; zinc compounds; ITO; InGaN-GaN-ZnO; electrochemical deposition; electrochemically grown nanorod arrays; indium-tin-oxide surface; internal reflection suppression; large-area LED; large-area blue light-emitting diodes; light output power; light transmittance; light-extraction enhancement; Gallium nitride; Glass; Indium tin oxide; Light emitting diodes; Reflectivity; Zinc oxide; Electrochemical deposition; GaN-based light-emitting diodes (LEDs); light extraction; zinc oxide (ZnO) nanorods;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2158092

Filename

5778949