Title :
Nickel-Silicide Contact Technology With Dual Near-Band-Edge Barrier Heights and Integration in CMOS FinFETs With Single Mask
Author :
Sinha, Mantavya ; Chor, Eng Fong ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
This letter reports the demonstration of a nickel-silicide contact technology that achieves dual near-band-edge barrier heights (i.e., a low electron barrier height ΦBn for n-FETs and a low hole barrier height ΦBp for p-FETs) using just one additional masking and two ion-implant steps. Independent and effective tuning of contact resistance RC is achieved in both p- and n-FinFETs. The compensation effect of aluminum and sulfur implants is studied for the first time and exploited for process simplification. A novel cost-effective integration scheme is shown to give significant IDSAT enhancement for p- and n-FinFETs.
Keywords :
CMOS integrated circuits; MOSFET; aluminium; ion implantation; masks; nickel compounds; sulphur; CMOS FinFET; NiSi; aluminum implant; contact resistance tuning; cost-effective integration scheme; ion-implant steps; masking; n-FinFET; near-band-edge barrier heights; nickel-silicide contact technology; p-FinFET; sulfur implant; CMOS technology; Charge carrier processes; Contact resistance; FinFETs; Germanium silicon alloys; Implants; Nickel; Schottky barriers; Silicides; Silicon germanium; Aluminum (Al) implant; FinFETs; Schottky barrier height; contact resistance; double-species implant; nickel silicide (NiSi); sulfur (S) implant;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2052586
