Author :
Artola, Laurent ; Hubert, Guillaume ; Warren, Kevin M. ; Gaillardin, Marc ; Schrimpf, Ronald D. ; Reed, Robert A. ; Weller, Robert A. ; Ahlbin, Jonathan R. ; Paillet, Philippe ; Raine, Melanie ; Girard, Sylvain ; Duzellier, Sophie ; Massengill, Lloyd W. ;
Abstract :
A new methodology of prediction for SEU is proposed based on SET modeling. The modeling of multi-node charge collection is performed using the ADDICT model for predicting single event transients and upsets in bulk transistors and SRAMs down to 65 nm. The predicted single event upset cross sections agree well with experimental data for SRAMs.
Keywords :
SRAM chips; integrated circuit modelling; transistors; ADDICT model; SET model; SEU prediction; SRAM; advanced dynamic diffusion collection transient model; bulk transistor; multinode charge collection; single event transient model; single event upset prediction; size 65 nm; technology node; Capacitance; Current measurement; Junctions; MOSFETs; Predictive models; Transient analysis; Cross section prediction; heavy ion irradiation; multi-node collection; single event transient; single event upset; transient current model;
