DocumentCode
152905
Title
First demonstration of photomixing at 1550 nm in ErAs:GaAs
Author
Middendorf, J.R. ; Zhang, Wensheng ; Martin, Miquel ; Brown, E.R.
Author_Institution
Depts. of Phys. & Electr. Eng., Wright State Univ., Dayton, OH, USA
fYear
2014
fDate
14-19 Sept. 2014
Firstpage
1
Lastpage
2
Abstract
We have extended the discovery of ultrafast extrinsic photoconductivity in ErA:GaAs to the 1550 nm-driven continuous-wave (CW) photomixer. The photocurrent in the photomixer has been measured as a function of 1550 nm laser power and bias voltage. Then the first ever 1550 nm ErAs:GaAs photomixing transceiver was setup and THz power was successfully measured. The work done here represents the first ever CW THz generation in ErAs:GaAs based on extrinsic photoconductivity.
Keywords
III-V semiconductors; erbium compounds; gallium arsenide; multiwave mixing; optical transceivers; photoconductivity; CW THz generation; CW photomixer; ErAs:GaAs; THz power; bias voltage; continuous-wave photomixer; laser power; photomixing transceiver; ultrafast extrinsic photoconductivity discovery; wavelength 1550 nm; Erbium-doped fiber lasers; Measurement by laser beam; Photoconductivity; Photonics; Power lasers; Power measurement; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location
Tucson, AZ
Type
conf
DOI
10.1109/IRMMW-THz.2014.6956156
Filename
6956156
Link To Document