Title :
Novel design for high-power single-lateral-mode lasers
Author :
Huber, A.E. ; Yeoh, T.S. ; Swint, R.B. ; Woo, C.Y. ; Lee, K.E. ; Roh, S.D. ; Coleman, J.J. ; Faircloth, B.O. ; Zediker, M.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
A new laser design for single-mode high-power applications is reported. The waveguide is a laterally flaring and transversely tapering GaAs buried ridge fabricated by selective area epitaxy. Single-lateral-mode powers of 200 mW were achieved.
Keywords :
III-V semiconductors; gallium arsenide; laser modes; optical fabrication; plasma CVD; ridge waveguides; semiconductor lasers; vapour phase epitaxial growth; waveguide lasers; 200 mW; GaAs; GaAs buried ridge waveguide laser design; high-power single-lateral-mode laser design; laterally flaring; selective area epitaxy; single-lateral-mode powers; transversely tapering; Biomedical optical imaging; Erbium-doped fiber lasers; Lab-on-a-chip; Laser modes; Optical design; Optical pumping; Optical waveguides; Pump lasers; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
