Title :
High-saturation high-speed traveling-wave InGaAsP-InP electroabsorption modulator
Author :
Li, G.L. ; Pappert, S.A. ; Mages, P. ; Sun, C.K. ; Chang, W.S.C. ; Yu, P.K.L.
Author_Institution :
Dept. of Electron. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
High-saturation power traveling-wave electroabsorption modulators (TW-EAMs) with modulation bandwidth greater than 40 GHz have been demonstrated. Microwave properties of the TW-EAM waveguide are extracted from the measured S-parameters using an equivalent circuit model. Excellent agreement is obtained between the predicted and the measured frequency responses.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; equivalent circuits; gallium arsenide; gallium compounds; indium compounds; integrated optics; microwave photonics; optical communication equipment; optical saturation; optical waveguides; 40 GHz; InGaAsP-InP; InGaAsP-InP electroabsorption modulator; S-parameters; TW-EAM waveguide; equivalent circuit model; high-saturation; high-speed; measured frequency responses; microwave properties; modulation bandwidth; traveling-wave; Bandwidth; Electrodes; Frequency measurement; Impedance; Optical attenuators; Optical fiber devices; Optical modulation; Optical saturation; Optical waveguides; Sun;
Journal_Title :
Photonics Technology Letters, IEEE
