High-saturation high-speed traveling-wave InGaAsP-InP electroabsorption modulator

Author

Li, G.L. ; Pappert, S.A. ; Mages, P. ; Sun, C.K. ; Chang, W.S.C. ; Yu, P.K.L.

Author_Institution

Dept. of Electron. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

13

Issue

10

fYear

2001

Firstpage

1076

Lastpage

1078

Abstract

High-saturation power traveling-wave electroabsorption modulators (TW-EAMs) with modulation bandwidth greater than 40 GHz have been demonstrated. Microwave properties of the TW-EAM waveguide are extracted from the measured S-parameters using an equivalent circuit model. Excellent agreement is obtained between the predicted and the measured frequency responses.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; equivalent circuits; gallium arsenide; gallium compounds; indium compounds; integrated optics; microwave photonics; optical communication equipment; optical saturation; optical waveguides; 40 GHz; InGaAsP-InP; InGaAsP-InP electroabsorption modulator; S-parameters; TW-EAM waveguide; equivalent circuit model; high-saturation; high-speed; measured frequency responses; microwave properties; modulation bandwidth; traveling-wave; Bandwidth; Electrodes; Frequency measurement; Impedance; Optical attenuators; Optical fiber devices; Optical modulation; Optical saturation; Optical waveguides; Sun;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.950740

Filename

950740