Title :
Broadband plasmonic terahertz absorber based on silicon cross structures
Author :
Yong Zhi Cheng ; Withayachumnankul, Withawat ; Upadhyay, Ankit ; Yan Nie ; Rong Zhou Gong ; Bhaskaran, Madhu ; Sriram, Srinath ; Abbott, Derek
Author_Institution :
Sch. of Electr. & Electron. Eng., Univ. of Adelaide, Adelaide, SA, Australia
Abstract :
A broadband terahertz absorber based on plasmonic cross structure resonators is proposed and investigated. This plasmonic absorber yields above 90% absorbance from 0.67 THz to 1.78 THz in the simulation, compared with 0.74 THz to 1.62 THz in the experiment. The remarkable absorption bandwidth of about 90% in theory can be associated with two plasmonic resonances supported by the cavities bounded by the cross structure. Further, the absorber is polarization-insensitive and can operate over a wide range of incidence angles for both the transverse electric (TE) and transverse magnetic (TM) radiation. This plasmonics approach to terahertz absorption provides a path towards realization of efficient components for bolometric imaging and terahertz communications.
Keywords :
bolometers; elemental semiconductors; plasmonics; silicon; surface plasmon resonance; terahertz wave detectors; terahertz wave generation; terahertz wave imaging; terahertz waves; Si; bolometric imaging; broadband plasmonic terahertz absorber; frequency 0.67 THz to 1.78 THz; plasmonic cross structure resonators; plasmonic resonances; silicon cross structures; terahertz absorption; terahertz communications; transverse electric radiation; transverse magnetic radiation; Absorption; Arrays; Broadband communication; Cavity resonators; Metamaterials; Plasmons; Semiconductor device measurement;
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
DOI :
10.1109/IRMMW-THz.2014.6956162
