Title :
Light Output Enhancement of Near UV-LED by Using Ti-Doped ITO Transparent Conducting Layer
Author :
Lin, Yung Hsun ; Liu, Y.S. ; Liu, C.Y.
Author_Institution :
Dept. of Chem. Eng. & Mater. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
With Ti doping, the transmittance of indium-tin-oxide (ITO) thin film is greatly enhanced in near the ultraviolet (UV) range. After annealing at 500 °C in vacuum, the transmittance of Ti-doped ITO (Ti : ITO) thin film at 380 nm is larger than that of pure ITO thin film by 22%. And, the resistivity of annealed Ti : ITO thin film is equivalent with that of ITO thin film (4.248×10-4 Ω·cm). Using Ti : ITO as TCL, the light output power of UV light-emitting diode (LED) is enhanced by 52.1%, compared to UV-LED (380 nm) with an ITO transparent conducting layer.
Keywords :
annealing; contact resistance; indium compounds; light emitting diodes; light transmission; optical films; titanium; transparency; ultraviolet sources; ITO:Ti; UV-LED; electrical resistivity; indium-tin-oxide thin film; light output enhancement; light transmittance; temperature 500 degC; transparent conducting layer; vacuum annealing; wavelength 380 nm; Annealing; Conducting materials; Conductivity; Doping; Indium tin oxide; Light emitting diodes; Power generation; Sputtering; Substrates; Transistors; Contact resistance; indium–tin–oxide (ITO); light-emitting diodes (LEDs); ultraviolet (UV) sources;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2056363
