Title :
Effect of heavy-ion irradiation on transport properties of YBa/sub 2/Cu/sub 3/O/sub x/ films
Author :
Dong Ho Kim ; Seong Yup Shim ; Jong Hyeog Park ; Young Hwan Kim ; Chang Hoon Kim ; Jin Wook Jang ; Taek Sang Hahn ; Sang Sam Choi ; Hettinger, J.D. ; Steel, D.G. ; Gray, K.E.
Author_Institution :
Yeungnam Univ., Kyungsan, South Korea
fDate :
6/1/1997 12:00:00 AM
Abstract :
We have investigated the effect of heavy-ion irradiation on the transport properties of YBa/sub 2/Cu/sub 3/O/sub x/ thin films. Parallel columnar defects to the c axis and crossed columnar defects were introduced into films by heavy-ion irradiation with dose equivalent to 1 or 2 T vortex density. The electrical transport properties including resistivity, critical current density, and the Hall resistivity were measured as a function of temperature, applied magnetic field, and fluence. The irreversibility line defined as an onset of dissipation progressively shifted to higher temperature with increasing dosage and showed its dependence on inclination angle. Critical current also showed a clear enhancement compared to the unirradiated samples. The Hall scaling behavior and the Hall conductivity were modified after heavy-ion irradiation.
Keywords :
Hall effect; barium compounds; critical current density (superconductivity); crystal defects; electrical resistivity; high-temperature superconductors; ion beam effects; superconducting thin films; yttrium compounds; Hall conductivity; Hall resistivity; Hall scaling behavior; YBa/sub 2/Cu/sub 3/O; YBa/sub 2/Cu/sub 3/O/sub x/ films; applied magnetic field; critical current density; crossed columnar defects; dissipation; electrical transport properties; heavy-ion irradiation; inclination angle; irreversibility line; parallel columnar defects; resistivity; Conductivity; Critical current density; Current measurement; Density measurement; Electric variables measurement; Magnetic field measurement; Magnetic films; Magnetic properties; Temperature; Transistors;
Journal_Title :
Applied Superconductivity, IEEE Transactions on