Annealing of irradiation induced defects in a LaSrCuO crystal

Author

Sutton, R.A. ; McHenry, M.E. ; Sickafus, K.E.

Author_Institution

Carnegie Mellon Univ., Pittsburgh, PA, USA

Volume

7

Issue

2

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

2001

Lastpage

2004

Abstract

Annealing experiments were performed on a LSCO single crystal irradiated with fast neutrons to a fluence of 2.52/spl times/10/sup 18/ n/cm/sup 2/. This fluence increased the critical current density by a factor of 2-3. The sample was annealed for a total of 4.5 hours at 200/spl deg/C and 8 hours at 300/spl deg/C. It was found that annealing of LSCO has a much lesser effect on its critical current density, particularly along the c axis, compared to YBCO. It is hypothesized that the reduced annealing effect is due to the formation of either a more stable interstitial cluster (compared to the Cu-O cluster in YBCO), or clusters which do not act as pinning sites.

Keywords

annealing; critical current density (superconductivity); high-temperature superconductors; interstitials; lanthanum compounds; neutron effects; strontium compounds; 200 degC; 300 degC; 4.5 hour; 8 hour; HTSC; LaSrCuO; LaSrCuO crystal; annealing; critical current density; interstitial cluster; irradiation induced defects; neutron irradiation; single crystal; Annealing; Critical current density; Crystals; High temperature superconductors; Laboratories; Magnetic hysteresis; Neutrons; SQUIDs; Superconducting materials; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.620982

Filename

620982