Characterization and improvement of a YBCO multilayer film process for HTS circuit applications

Author

Pettiette-Hall, C.L. ; Murduck, J. ; Burch, J.F. ; Sergant, M. ; Hu, R. ; Cordrump, J. ; Luong, M. ; Ellis, R.K.

Author_Institution

TRW Space & Electron. Group, Redondo Beach, CA, USA

Volume

7

Issue

2

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

2057

Lastpage

2062

Abstract

We have developed a 2" multilayer HTS integrated circuit process which contains up to three superconducting YBCO layers, epitaxial dielectric (SrTiO/sub 3/ or SrTiO/sub 3/+Sr/sub 2/AlTaO/sub 6/ combination), Ag wiring, an integrated resistor and non-epitaxial Si/sub x/N/sub y/ dielectric. We have incorporated the use of n-factorial and Taguchi designed experiments to develop and optimize various aspects of this process. This article highlights the designed experiments which addressed fabrication issues for HTS superconducting crossovers, dielectric integrity, and HTS/Ag metal contact resistance.

Keywords

barium compounds; contact resistance; critical currents; high-temperature superconductors; superconducting device testing; superconducting integrated circuits; superconducting thin films; yttrium compounds; 2 in; Ag; Ag wiring; HTS circuit applications; HTS superconducting crossovers; HTS-normal metal contact resistance; HTS/Ag metal contact resistance; SiN; SrTiO/sub 3/; SrTiO/sub 3/-Sr/sub 2/AlTaO/sub 6/; Taguchi designed experiments; YBCO multilayer film process; YBaCuO; dielectric integrity; epitaxial dielectric; fabrication issues; integrated resistor; multilayer HTS integrated circuit process; n-factorial experiments; nonepitaxial Si/sub x/N/sub y/ dielectric; three superconducting YBCO layers; Design optimization; Dielectrics; High temperature superconductors; Nonhomogeneous media; Resistors; Superconducting epitaxial layers; Superconducting films; Superconducting integrated circuits; Wiring; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.620995

Filename

620995