Title :
Cryogenic low noise amplifier development for 67–116 GHz
Author :
Kotiranta, Mikko ; Bruch, Daniel ; Leuther, A. ; Massler, Hermann ; Seelmann-Eggebert, Matthias ; Schlechtweg, Michael ; Ambacher, Oliver ; Turk, Sener ; Goliasch, Jens ; Schafer, Frank
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
Two monolithic microwave integrated circuit low noise amplifiers for 67-116 GHz have been developed using the 50 nm metamorphic high electron mobility transistor technology of Fraunhofer IAF. Both amplifiers have been measured on-wafer at room temperature and one of them additionally in a waveguide module at an ambient temperature of 18 K. The average gain and noise temperature in the band 75-110 GHz are 23 dB and 69 K, respectively, in the latter case.
Keywords :
MMIC amplifiers; cryogenic electronics; high electron mobility transistors; low noise amplifiers; millimetre wave amplifiers; Fraunhofer IAF; cryogenic low noise amplifier; frequency 67 GHz to 116 GHz; metamorphic high electron mobility transistor technology; monolithic microwave integrated circuit; size 50 nm; temperature 18 K; temperature 293 K to 298 K; temperature 69 K; waveguide module; Cryogenics; Gain; MMICs; Noise; Temperature distribution;
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
DOI :
10.1109/IRMMW-THz.2014.6956175
