Title :
Raman microscopy as a local probe of structural defects and oxygen content in HTS thin films
Author :
Gibson, G. ; MacManus-Driscoll, J.L. ; Cohen, L.F.
Author_Institution :
Dept. of Mater., Imperial Coll. of Sci., Technol. & Med., London, UK
fDate :
6/1/1997 12:00:00 AM
Abstract :
Three YBa/sub 2/Cu/sub 3/O/sub 7-x/ (YBCO) thin films grown by c-beam evaporation have been studied using Raman microscopy. The films were grown at different temperatures and show different levels of cation disorder as determined from the ´c´ axis lattice parameter and certain X-ray peak intensity ratios. We report on how the position of the 115 cm/sup -1/ and 500 cm/sup -1/ Raman peaks change as a function of oxygen, cation disorder and spatial position across the films and relate the results to structural changes which occur in the YBCO unit cell.
Keywords :
Raman spectra; X-ray diffraction; barium compounds; crystal defects; high-temperature superconductors; lattice constants; stoichiometry; superconducting thin films; yttrium compounds; 115 cm/sup -1/; 500 cm/sup -1/; O content; Raman microscopy; X-ray peak intensity ratios; YBa/sub 2/Cu/sub 3/O/sub 7-x/; YBa/sub 2/Cu/sub 3/O/sub 7/; cation disorder; lattice parameter; structural changes; structural defects; thin films; Atomic layer deposition; Educational institutions; High temperature superconductors; Materials science and technology; Microscopy; Oxygen; Probes; Substrates; Transistors; Yttrium barium copper oxide;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
