Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

Author

Lester, L.F. ; Stintz, A. ; Li, H. ; Newell, T.C. ; Pease, E.A. ; Fuchs, B.A. ; Malloy, K.J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

11

Issue

8

fYear

1999

Firstpage

931

Lastpage

933

Abstract

The optical characteristics of the first laser diodes fabricated from a single-InAs quantum-dot layer placed inside a strained InGaAs QW are described. The saturated modal gain for this novel laser active region is found to be 9-10 cm/sup -1/ in the ground state. Room temperature threshold current densities as low as 83 A/cm² for uncoated 1.24-μm devices are measured, and operating wavelengths over a 190-nm span are demonstrated.

Keywords

III-V semiconductors; indium compounds; infrared spectra; laser modes; laser transitions; photoluminescence; quantum well lasers; semiconductor quantum dots; 1.24 mum; InAs; InAs quantum-dot laser diodes; InGaAs; ground state; laser active region; laser diodes; operating wavelengths; optical characteristics; room temperature threshold current densities; saturated modal gain; single-InAs quantum-dot layer; strained InGaAs QW; uncoated devices; Current measurement; Density measurement; Diode lasers; Indium gallium arsenide; Land surface temperature; Optical saturation; Quantum dot lasers; Quantum dots; Stationary state; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.775303

Filename

775303