Title :
Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
Author :
Lester, L.F. ; Stintz, A. ; Li, H. ; Newell, T.C. ; Pease, E.A. ; Fuchs, B.A. ; Malloy, K.J.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
The optical characteristics of the first laser diodes fabricated from a single-InAs quantum-dot layer placed inside a strained InGaAs QW are described. The saturated modal gain for this novel laser active region is found to be 9-10 cm/sup -1/ in the ground state. Room temperature threshold current densities as low as 83 A/cm2 for uncoated 1.24-μm devices are measured, and operating wavelengths over a 190-nm span are demonstrated.
Keywords :
III-V semiconductors; indium compounds; infrared spectra; laser modes; laser transitions; photoluminescence; quantum well lasers; semiconductor quantum dots; 1.24 mum; InAs; InAs quantum-dot laser diodes; InGaAs; ground state; laser active region; laser diodes; operating wavelengths; optical characteristics; room temperature threshold current densities; saturated modal gain; single-InAs quantum-dot layer; strained InGaAs QW; uncoated devices; Current measurement; Density measurement; Diode lasers; Indium gallium arsenide; Land surface temperature; Optical saturation; Quantum dot lasers; Quantum dots; Stationary state; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
