Intracavity contacts for low-threshold oxide-confined vertical-cavity surface-emitting lasers

Author

Huffaker, D.L. ; Deppe, D.G.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

11

Issue

8

fYear

1999

Firstpage

934

Lastpage

936

Abstract

Very low threshold vertical-cavity surface-emitting lasers are demonstrated using intracavity contacts, an upper dielectric Bragg reflector, and an undoped lower AlAs-GaAs Bragg reflector. The undoped lower mirror allows the demonstration of the highest differential efficiency yet achieved for sub-100-μA threshold, which is 60% for a 67-μA threshold. Devices with smaller output coupling show threshold current densities as low 98 A/cm², and a minimum threshold current of 23 μA for a small aperture.

Keywords

current density; distributed Bragg reflector lasers; laser mirrors; quantum well lasers; reflectivity; surface emitting lasers; 100 muA; 23 muA; 60 percent; 67 muA; AlAs-GaAs; VCSEL; differential efficiency; intracavity contacts; low-threshold oxide-confined vertical-cavity surface-emitting lasers; output coupling; quantum well lasers; small aperture; sub-100-/spl mu/A threshold; threshold current densities; undoped lower AlAs-GaAs Bragg reflector; undoped lower mirror; upper dielectric Bragg reflecto; Dielectrics; Distributed Bragg reflectors; Laser modes; Mirrors; Optical resonators; Semiconductor device doping; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.775304

Filename

775304