Title :
Edge-emitting GaInAs-AlGaAs microlasers
Author :
Hofling, E. ; Schafer, F. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
Abstract :
The fabrication and characteristics of edge-emitting microlasers with deeply etched distributed Bragg reflector (DBR) mirrors are presented. Using reactive ion etching, the mirrors are formed at both cavity ends of a ridge waveguide laser with an GaInAs-AlGaAs single-quantum-well active layer. The devices have continuous-wave threshold currents as low as 2 and 6 mA at cavity lengths of 80 and 40 μm, respectively. Lasing operation is achieved down to a length of 28 μm. Diffraction limited reflectivities >75% are obtained for third-order gratings, with two DBR periods.
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; indium compounds; micro-optics; microcavity lasers; micromechanical resonators; quantum well lasers; reflectivity; ridge waveguides; waveguide lasers; 2 mA; 28 mum; 6 mA; DBR mirrors; DBR periods; GaInAs-AlGaAs; GaInAs-AlGaAs single-quantum-well active layer; cavity ends; cavity lengths; continuous-wave threshold currents; deeply etched distributed Bragg reflector mirrors; diffraction limited reflectivities; edge-emitting GaInAs-AlGaAs microlasers; lasing operation; reactive ion etching; ridge waveguide laser; third-order gratings; Chemical lasers; Distributed Bragg reflectors; Dry etching; Mirrors; Monolithic integrated circuits; Optical device fabrication; Optoelectronic devices; Reflectivity; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
