Title :
1.17-μm highly strained GaInAs-GaAs quantum-well laser
Author :
Schlenker, D. ; Miyamoto, T. ; Chen, Z. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Excellent lasing properties and temperature characteristic of a highly strained 1.17-μm GaInAs-GaAs double-quantum-well laser are reported. We show that a strained buffer layer, which is employed in the device, has no tradeoff on the device performance. For a 1500-μm-long laser with cleaved facets a threshold current density of 200 A/cm2 is achieved. A transparency current density of 180 A/cm2 is estimated for as cleaved devices. A record high characteristic temperature in this wavelength range of 150 K is achieved.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser transitions; quantum well lasers; transparency; 1.17 mum; 150 K; 1500 mum; GaInAs-GaAs; cleaved devices; cleaved facets; device performance; high characteristic temperature; highly strained GaInAs-GaAs quantum-well laser; lasing properties; strained buffer layer; temperature characteristic; threshold current density; transparency current density; Buffer layers; Epitaxial growth; Epitaxial layers; Fiber lasers; Gallium arsenide; Optical materials; Quantum well lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
