• DocumentCode
    1529694
  • Title

    Atomic ordering and coercivity mechanism in FePt and CoPt polycrystalline thin films

  • Author

    Jeong, Sangki ; Hsu, Yu-Nu ; Laughlin, David E. ; McHenry, Michael E.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
  • Volume
    37
  • Issue
    4
  • fYear
    2001
  • fDate
    7/1/2001 12:00:00 AM
  • Firstpage
    1299
  • Lastpage
    1301
  • Abstract
    40 nm thick CoPt and FePt films were prepared on oxidized Si substrates with 10 nm MgO underlayers. The maximum coercivity (Hc ) for CoPt films was found to be ~10 kOe after annealing at 700°C for ~20-30 minutes (min). Structural analysis showed a significant amount of FCC phase as well as the ordered L10 phase in these films. FePt films showed an abrupt increase of ordered volume fraction and Hc in the initial stage of annealing and predominance of the tetragonal L10 phase after 10 min. at 700°C. The maximum Hc reached ~16 kOe after annealing at 700°C for more than 20 minutes. Dark field (DF) images of the annealed CoPt films showed individual grains which exhibited a possibility of several variants or disordered phase with dimensions similar to the exchange correlation length, bcm. The temperature dependence of Hc seems to indicate a weak pinning mechanism in the highly ordered FePt films. Magnetic force microscopy indicated a complex domain structure consisting of clusters with dimensions of several hundred nanometers
  • Keywords
    annealing; cobalt alloys; coercive force; exchange interactions (electron); iron alloys; magnetic domains; magnetic force microscopy; magnetic thin films; platinum alloys; 700 C; CoPt; CoPt polycrystalline thin film; FCC phase; FePt; FePt polycrystalline thin film; MgO underlayer; Si substrate; annealing; atomic ordering; coercivity; dark field imaging; disordered phase; domain pinning; domain structure; exchange correlation length; magnetic force microscopy; structural analysis; tetragonal L10 phase; volume fraction; Annealing; Atomic force microscopy; Coercive force; Magnetic anisotropy; Magnetic devices; Magnetic films; Magnetic force microscopy; Magnetic forces; Perpendicular magnetic anisotropy; Transistors;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.950823
  • Filename
    950823