Title :
High-performance long-wavelength (/spl lambda//spl sim/1.3 μm) InGaAsPN quantum-well lasers
Author :
Gokhale, M.R. ; Wei, J. ; Studenkov, P.V. ; Wang, H. ; Forrest, S.R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
We demonstrate high-performance InGaAsPN quantum well based long-wavelength lasers grown on GaAs substrates, nitrogen containing lasers emitting in the /spl lambda/=1.2- to 1.3-μm wavelength range were grown by gas source molecular beam epitaxy using a RF plasma nitrogen source. Under pulsed excitation, lasers emitting at /spl lambda/=1.295 μm exhibited a record low threshold current density (J/sub TH/) of 2. 5 kA/cm2. Lasers grown with less nitrogen in the quantum well exhibited significantly lower threshold current densities of J/sub TH/=1.9 kA/cm2 at /spl lambda/=1.27 μm and J/sub TH/=1.27 kA/cm2 at /spl lambda/=1.2 μm. We also report a slope efficiency of 0.4 W/A and an output power of 450 mW under pulsed operation for nitrogen containing lasers emitting at 1.2 μm.
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; quantum well lasers; 1.2 to 1.3 mum; 1.27 mum; 1.295 mum; 450 mW; GaAs substrates; InGaAsPN; MBE growth; RF plasma nitrogen source; gas source molecular beam epitaxy; high-performance; laser transitions; lnGaAsPN quantum-well lasers; long-wavelength; nitrogen containing lasers; pulsed excitation; pulsed operation; record low threshold current density; slope efficiency; Gallium arsenide; Gas lasers; Molecular beam epitaxial growth; Nitrogen; Optical pulses; Plasma density; Quantum well lasers; Radio frequency; Substrates; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
