Title :
11.5-W CW 1.83-μm diode laser array
Author :
Maiorov, M. ; Menna, R. ; Khalfin, V. ; Milgazo, H. ; Matarese, R. ; Garbuzov, D. ; Connolly, J.
Author_Institution :
Sensors Unlimited Inc., Princeton, NJ, USA
Abstract :
We demonstrate high-power operation of both individual broad-waveguide separate-confinement-heterostructure quantum-well InGaAsP-InP laser diodes and 1-cm-wide arrays emitting at 1.83 μm. Despite strong dependence of threshold current density and diode efficiency on operating temperature, a continuous-wave output power of 2.1 W has been obtained for 100-μm-aperture lasers with 2-mm-long cavities. An output power of 11.5 W was reached for ten element 1-cm-wide array at a heatsink temperature of 16/spl deg/C.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heat sinks; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; semiconductor laser arrays; waveguide lasers; 1 cm; 1.83 mum; 100 mum; 11.5 W; 16 C; 2 mm; 2.1 W; CW 1.83-/spl mu/m diode laser array; InGaAsP-InP; aperture lasers; broad-waveguide separate-confinement-heterostructure quantum-well InGaAsP-InP laser diodes; continuous-wave output power; diode efficiency; heatsink temperature; high-power operation; long cavities; operating temperature; output power; threshold current density; Copper; Current measurement; Diode lasers; Optical arrays; Power generation; Power lasers; Power measurement; Pulse measurements; Semiconductor laser arrays; Temperature dependence;
Journal_Title :
Photonics Technology Letters, IEEE
