DocumentCode
1529822
Title
Fabrication of ultracompact 3-dB 2 x 2 MMI power splitters
Author
Levy, David S. ; Park, Kyung Hyun ; Scarmozzino, Robert ; Osgood, Richard M., Jr. ; Dries, Chris ; Studenkov, Pavel ; Forrest, Stephen
Author_Institution
Microelectron. Sci. Lab., Columbia Univ., New York, NY, USA
Volume
11
Issue
8
fYear
1999
Firstpage
1009
Lastpage
1011
Abstract
Recently proposed tapered MMI devices have been shown to allow for substantial reductions in device geometries, but as of this time such ultracompact devices have not been realized. The fabrication and testing of a series of parabolically tapered 3-dB 2/spl times/2 MMI devices have been accomplished in the InP-InGaAsP double heterostructure system. The results validate previous predictions and yield device geometries about 40% smaller than the shortest previous 3-dB 2/spl times/2 MMI device. The measured splitting ratios of these devices are compared to the results of numerous beam propagation method simulations, based on the finite-difference method, and good correlation is obtained.
Keywords
III-V semiconductors; finite difference methods; gallium arsenide; gallium compounds; indium compounds; integrated optics; light interference; optical beam splitters; optical fabrication; optical testing; InP-InGaAsP; InP-InGaAsP double heterostructure; beam propagation method simulations; device geometries; finite-difference method; multimode interference; parabolically tapered 3-dB 2/spl times/2 MMI devices; splitting ratios; tapered MMI devices; ultracompact 3-dB 2/spl times/2 MMI power splitter fabrication; ultracompact devices; Circuits; Couplers; Fabrication; Finite difference methods; Geometry; Laboratories; Microelectronics; Optical imaging; Optical interferometry; Optical waveguides;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.775329
Filename
775329
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