DocumentCode
1530009
Title
Stacking faults and their effect on magnetocrystalline anisotropy in Co and Co-alloy thin films
Author
Bian, Bo ; Yang, Wei ; Laughlin, David E. ; Lambeth, David N.
Author_Institution
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume
37
Issue
4
fYear
2001
fDate
7/1/2001 12:00:00 AM
Firstpage
1456
Lastpage
1458
Abstract
Stacking faults in (101¯0) unicrystal Co and Co-alloy thin films have been analyzed by the electron diffraction technique. As predicted no diffraction contrast of stacking faults could be observed when the beam is parallel to the [101¯0] direction. However, both by plan-view TEM observation and electron diffraction along the [112¯0] direction reveal that the stacking fault density in biased pore Co (101¯0) Bin films is much lower than that in unbiased ones. The addition of Cr in Co films significantly reduces stacking fault density whereas the addition of 8 at% Pt leads to a considerable increase in stacking fault density. Our results show that stacking faults in Co thin films significantly, and negatively, affect the anisotropy energy density and its temperature dependence
Keywords
alloying additions; cobalt; cobalt alloys; electron diffraction; ferromagnetic materials; magnetic anisotropy; magnetic recording; magnetic thin films; metallic thin films; stacking faults; transmission electron microscopy; Co; Co-Cr; Co-Pt; anisotropy energy density; biased films; electron diffraction; magnetocrystalline anisotropy; plan-view TEM; recording media; single crystal thin films; stacking fault density; stacking faults effect; temperature dependence; Anisotropic magnetoresistance; Chromium; Diffraction; Electrons; Magnetic analysis; Magnetic anisotropy; Perpendicular magnetic anisotropy; Stacking; Temperature dependence; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.950869
Filename
950869
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