• DocumentCode
    1530009
  • Title

    Stacking faults and their effect on magnetocrystalline anisotropy in Co and Co-alloy thin films

  • Author

    Bian, Bo ; Yang, Wei ; Laughlin, David E. ; Lambeth, David N.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
  • Volume
    37
  • Issue
    4
  • fYear
    2001
  • fDate
    7/1/2001 12:00:00 AM
  • Firstpage
    1456
  • Lastpage
    1458
  • Abstract
    Stacking faults in (101¯0) unicrystal Co and Co-alloy thin films have been analyzed by the electron diffraction technique. As predicted no diffraction contrast of stacking faults could be observed when the beam is parallel to the [101¯0] direction. However, both by plan-view TEM observation and electron diffraction along the [112¯0] direction reveal that the stacking fault density in biased pore Co (101¯0) Bin films is much lower than that in unbiased ones. The addition of Cr in Co films significantly reduces stacking fault density whereas the addition of 8 at% Pt leads to a considerable increase in stacking fault density. Our results show that stacking faults in Co thin films significantly, and negatively, affect the anisotropy energy density and its temperature dependence
  • Keywords
    alloying additions; cobalt; cobalt alloys; electron diffraction; ferromagnetic materials; magnetic anisotropy; magnetic recording; magnetic thin films; metallic thin films; stacking faults; transmission electron microscopy; Co; Co-Cr; Co-Pt; anisotropy energy density; biased films; electron diffraction; magnetocrystalline anisotropy; plan-view TEM; recording media; single crystal thin films; stacking fault density; stacking faults effect; temperature dependence; Anisotropic magnetoresistance; Chromium; Diffraction; Electrons; Magnetic analysis; Magnetic anisotropy; Perpendicular magnetic anisotropy; Stacking; Temperature dependence; Transistors;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.950869
  • Filename
    950869